However, despite their exceptional material properties, a key challenge for TMDC light-emitting devices to date has been the formation of ohmic contacts to electrons and holes in the same device. The high PL QY and subnanometer thickness of TMDCs can be leveraged to develop large-area, transparent, and efficient light-emitting devices 3, 6. Recent advances in the synthesis of high-quality TMDCs via chemical vapor deposition (CVD) demonstrate their potential for scalability 10, 11. In addition, monolayer TMDCs display a myriad of attractive and unique physical properties including the lack of inversion symmetry, chiral light emission, and the ability to form heterostructures without the need for lattice matching 7, 8, 9.
Their unique properties include naturally terminated surfaces at the monolayer limit (~0.7 nm), which when coupled with appropriate passivation of defect sites can result in near-unity photoluminescence (PL) quantum yield (QY) 3, 6. Transition-metal dichalcogenides (TMDCs) such as WSe 2 and MoS 2 are semiconducting analogs of graphene, and are candidate materials for next-generation optoelectronic and electronic devices 1, 2, 3, 4, 5.
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